TH58NVG3S0HTA00

厂牌

TOSHIBA

IC 类别

FLASH-NAND

IC代码

1GX8 NAND SLC

外包装

TRAY

无铅/环保

无铅/环保

电压(伏)

2.7v-3.6v

温度规格

0° ~ 70°C

速度

标准包装数量

960

标准外箱

潜在应用

· R&D DESIGN HOUSE/研發/設計

Number Of Words

128M

Bit Organization

x8

Density

1G

Channel

Single, # of CE 1

Design Rule

24nm B-type

Page Size

4KB

Package Material

Lead-Free: Yes, Halogen-Free: Yes

Block Size

256KB

Nand Type

NAND

Cell Level

2 Level( 1 bits/cell )

Package Size

TSOP[mm]: 12 x 20 x 1.2, LGA[mm]: Reserved, BGA[mm]: General code( 12.5x20, 14x18, 12x18 )

Mono Stack

Multi Chip