制造商IC编号 | TH58NVG2S3HBAI4 |
厂牌 | TOSHIBA |
IC 类别 | FLASH-NAND |
IC代码 | 512MX8 NAND SLC |
脚位/封装 | BGA |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 3.3 V |
温度规格 | -40 to 85 °C |
DC | 17+ |
标准包装数量 | 1000 |
数量 | 16000 |
潜在应用 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Block Size | 128KB |
Package Material | Lead-Free: Yes, Halogen-Free: Yes |
Channel | Single, # of CE 1 |
Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 12 x 17 x 1.0, BGA[mm]: 60 balls, 9 x 11 |
Page Size | 2KB |
Mono Stack | Multi Chip |
Cell Level | 2 Level( 1 bits/cell ) |
Design Rule | 24nm B-type |
Nand Type | NAND |