TC58NYG2S3ETAI0

厂牌

TOSHIBA

IC 类别

FLASH-NAND

IC代码

58NYG2S3

外包装

TRAY

无铅/环保

无铅/环保

电压(伏)

1.70-1.95V

温度规格

INDUSTRIAL

数量

8000

标准包装数量

480

标准外箱

全新原装

潜在应用

Number Of Words

64M

Bit Organization

x8

Density

512M

Nand Type

NAND

Package Material

Lead-Free: Yes, Halogen-Free: Yes

Mono Stack

Single Chip

Design Rule

43 nm

Block Size

128KB

Package Size

TSOP[mm]: 12 x 20 x 1.2, LGA[mm]: Reserved
BGA[mm]: General code( 12.5x20, 14x18, 12x18 )

Page Size

2KB

Cell Level

2 Level( 1 bits/cell )

Channel

Single, # of CE 1